In situ detection of laser-induced slip initiation on the silicon wafer surface
http://www.ncbi.nlm.nih.gov/pubmed/25121706
In situ detection of laser-induced slip initiation on the silicon wafer surface.
Abstract
We propose a real-time in situ method to detect slip initiation on the surface of silicon wafers during high-power laser beam irradiation. In this method, light is collected from the surface of a silicon wafer subjected to laser irradiation. When the slip is initiated, it strongly scatters the laser beam, allowing detection of the time of the slip initiation based on the resulting sudden increase in the scattering signal. To demonstrate the performance of this method, a silicon wafer specimen was illuminated by a near-infrared continuous-wave fiber laser beam (of wavelength 1070 nm) at four different laser powers, and the scattered light was detected. The scattering signal increased suddenly at the time of slip initiation. To confirm the occurrence of slip, the surface morphologies of the silicon specimens after laser irradiation were analyzed using an optical microscope; surface slips were observed only in the specimens for which the sudden increase in scattering had been detected. Thus, the proposed method is shown to be very effective for the real-time in situ detection of surface slip initiation induced by high-power laser beam irradiation on silicon wafers.
- 한국도로공사 교통데이터 공모전 - 대한교통학회 회장상 수상 (김진수)
- 한국ITS학회 - 우수논문상
- 비파괴검사학회지 우수 논문상 (김정석, 남태형, 최성호, 장경영)
- 비파괴검사학회지 - 우수논문상
- 비파괴검사학회지 - 우수 논문상
- 대한기계학회 - 우수 학생 논문상
- Slip damage of silicon wafers subjected to continuous infrared laser irradiation
- Relative Measurement of the Acoustic Nonlinearity Parameter using Laser Detection of an Ultrasonic Wave
- Relationship between Second- and Third-order Acoustic Nonlinear Parameters in Relative Measurement
- Non-Contact Evaluation of Acoustic Nonlinearity of a Laser-Generated Surface Wave in a Plastically Deformed Aluminum Alloy
- KSME-SEMES 오픈 이노베이션 챌린지 동상 수상 - 윤성희
- JMST - JMST Contribution Award