Initiation time of near-infrared laser-induced slip on the surface of silicon wafers
http://scitation.aip.org/content/aip/journal/apl/104/25/10.1063/1.4885385
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ABSTRACT
We have determined the initiation time of laser-induced slip on a silicon wafer surface subjected to a near-infrared continuous-wave laser by numerical simulations and experiments. First, numerical analysis was performed based on the heat transfer and thermoelasticity model to calculate the resolved shear stress and the temperature-dependent yield stress. Slip initiation time was predicted by finding the time at which the resolved shear stress reached the yield stress.Experimentally, the slip initiation time was measured by using a laser scattering technique that collects scattered light from the silicon wafer surface and detects strong scattering when thesurface slip is initiated. The surface morphology of the silicon wafer surface after laser irradiationwas also observed using an optical microscope to confirm the occurrence of slip. The measuredslip initiation times agreed well with the numerical predictions.
- Initiation time of near-infrared laser-induced slip on the surface of silicon wafers
- JMST - JMST Contribution Award
- KSME-SEMES 오픈 이노베이션 챌린지 동상 수상 - 윤성희
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- Slip damage of silicon wafers subjected to continuous infrared laser irradiation
- 대한기계학회 - 우수 학생 논문상
- 비파괴검사학회지 - 우수 논문상
- 비파괴검사학회지 - 우수논문상
- 비파괴검사학회지 우수 논문상 (김정석, 남태형, 최성호, 장경영)